document number: 89401 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount ultrafast plastic rectifier esh1b, esh1c, esh1d vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? ultrafast recovery ti mes for high efficiency ? low forward voltage, low power loss ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds ac/ac and dc/dc converters in high temperature conditions for both consumer applications. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol esh1b esh1c esh1d unit device marking code ehb ehc ehd maximum repetitive pe ak reverse voltage v rrm 100 150 200 v maximum rms voltage v rms 70 105 140 v maximum dc blocking voltage v dc 100 150 200 v maximum average forward rectified current at t l = 150 c i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load (jedec method) i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89401 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 esh1b, esh1c, esh1d vishay general semiconductor new product note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) units mounted on pcb with 5.0 mm x 5. 0 mm (0.013 mm thick) land areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current de rating curve fig. 2 - maximum non-re petitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage i f = 0.7 a v f (1) 0.87 v i f = 1 a v f 0.90 maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 1.0 a t a = 125 c 25 maximum reverse current v r = 20 v, t j = 150 c i r 50 a maximum reverse recovery time i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t rr 25 ns t j = 100 c 35 typical stored charge i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c q rr 10 nc t j = 100 c 15 typical junction capacitance 4.0 v, 1 mhz c j 25 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol esh1b esh1c esh1d unit typical thermal resistance r ? ja (1) 85 c/w r ? jl (1) 30 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode esh1d-m3/61t 0.064 61t 1800 7" diam eter plastic tape and reel esh1d-m3/5at 0.064 5at 7500 13" diameter plastic tape and reel 0 1.2 95 105 115 125 135 145 155 165 average forward rectified current (a) lead temperature (c) 0.8 1.0 0.2 0.4 0.6 175 t l measured at the cathode band terminal peak forward surge current (a) number of cycles at 60 hz 1 10 100 10 40 20 50 30 0
document number: 89401 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 esh1b, esh1c, esh1d vishay general semiconductor new product fig. 3 - typical reverse leakage characteristics fig. 4 - typical instantaneous forward characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) t j = 25 c t j = 150 c t j = 125 c t j = 100 c percent of rated peak reverse voltage (%) 100 10 0.1 0.01 0.001 1 20 40 60 80 100 instantaneous reverse leakage current (a) t j = 175 c instantaneous forward current (a) instantaneous forward voltage (v) 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 100 1.2 1.4 t j = 150 c t j = 125 c t j = 175 c t j = 25 c reverse voltage (v) junction capacitance (pf) 0.1 10 1 100 10 100 1 0.1 10 1 100 1 10 100 0.01 t - pulse duration (s) transient thermal impedance (c/w) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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